Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• , we find that irradiating the electrode–channel interface has a deleterious impact on charge transport when contrasted with irradiations confined only to the transistor channel. Keywords: 2D materials; contacts; defect engineering; helium ion microscope; ion beam doping; vacancies; two-dimensional